Darlington Transistors | 2N6052

12 A, 100 V PNP Darlington Bipolar Power Transistor

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概览

This Bipolar Power PNP Darlington Transistor is designed for general-purpose amplifier and low frequency switching applications.

  • High DC Current Gain
    hFE = 3500 (Typ) @ IC = 5.0 Adc
  • Collector-Emitter Sustaining Voltage— @ 100 mA
    VCEO(sus) = 80 Vdc (Min)—2N6058
    100 Vdc (Min)—2N6052, 2N6059
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • This is a Pb-Free Device

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IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

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参考价格

2N6052G

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Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

No

PNP

12

100

2

0.75

18

4

Price N/A

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可靠性数据

Die Related Summary Data

Device: 2N6052G

Equivalent to wafer fab process: BPT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

5020632277

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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