Darlington Transistors | 2N6286

20 A，80 V PNP 达林顿双极功率晶体管

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概览

该 20A 100 V PNP 达林顿功率晶体管适用于通用放大器和低频开关应用。

  • High DC Current Gain @ IC = 10 Adc
    hFE = 2400 (Typ) - 2N6284
    hFE = 4000 (Typ) - 2N6287
  • Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min)
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • Pb-Free Packages are Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

参考价格

2N6286G

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CAD Model

Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

No

PNP

20

80

2

0.75

18

4

Price N/A

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可靠性数据

Die Related Summary Data

Device: 2N6286G

Equivalent to wafer fab process: BPT

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

5020632277

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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