Darlington Transistors | MPSA29(LEGACY FAIRCHILD)

NPN Bipolar Junction Darlington Transistor

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This device is designed for applications requiring extremely high current gain at collector currents to 500 mA.

  • High gain device

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Product services, tools and other useful resources related to MPSA29(LEGACY FAIRCHILD)

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IC Continuous (A)

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hFE Max (k)

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MPSA29

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CAD Model

Pb

A

H

P

TO-92-3

135AN

NA

0

BLKBG

10000

Y

NPN

0.8

100

1.5

10

-

125

$0.0864

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MPSA29-D26Z

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CAD Model

Pb

A

H

P

TO-92-3 LF

135AR

NA

0

REEL

2000

Y

NPN

0.8

100

1.5

10

-

125

$0.0864

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可靠性数据

Die Related Summary Data

Device: MPSA29

Equivalent to wafer fab process: SST

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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