Darlington Transistors | BDV65B

10 A，100 V NPN 达林顿双极功率晶体管

已停产

数据表

购买

概览

此 10 A，100 V NPN 双极功率晶体管用作互补通用放大器应用中的输出器件。BDV65B (NPN) 和 BDV64B (PNP) 为互补器件。

  • High DC Current Gain HFE = 1000 (min.) @ 5 Adc
  • Monolithic Construction with Built-in Base Emitter Shunt Resistors
  • These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

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与BDV65B相关的产品服务、工具和其他资源

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Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

Package Size (mm)

参考价格

BDV65B

联系销售

已停产

CAD Model

Pb

A

H

P

SOT-93-3 / TO-218-3

340D-02

NA

0

TUBE

30

No

NPN

10

100

2

1

-

-

Price N/A

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BDV65BG

联系销售

已停产

CAD Model

Pb

A

H

P

TO-247

340L

NA

0

TUBE

30

No

NPN

10

100

2

1

-

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: BDV65BG

Equivalent to wafer fab process: BPT

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

5020632277

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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