Darlington Transistors | BDX33B

10 A, 80 V NPN Darlington Bipolar Power Transistor

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The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices.

  • High DC Current Gain -
    hFE = 2500 (typ.) at IC = 4.0
  • Collector-Emitter Sustaining Voltage at 100 mAdc
    VCEO(sus) = 80 Vdc (min.) BDX33B, 34B
    VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C
  • Low Collector-Emitter Saturation Voltage
    CE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc BDX33B, 33C/34B, 34C
  • Monolithic Construction with Build-In Base-Emitter Shunt resistors
  • TO-220AB Compact Package
  • Pb-Free Packages are Available

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BDX33B

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CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

NPN

10

80

2.5

0.75

-

-

Price N/A

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BDX33BG

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CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

Y

NPN

10

80

2.5

0.75

-

-

$0.4023

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可靠性数据

Die Related Summary Data

Device: BDX33BG

Equivalent to wafer fab process: BPT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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