Darlington Transistors | KSP13

NPN外延硅达林顿晶体管

量产中

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概览

500 mA, 30 V NPN Darlington Bipolar Junction Transistor

  • This product is general usage and suitable for many different applications.
  • 集电极-发射极电压： VCES= 30V
  • 集电极功耗： PC（最大值）= 625mW
  • High Gain Devices
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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与KSP13相关的产品服务、工具和其他资源

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MSL Temp (°C)

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IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

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参考价格

KSP13BU

联系销售

量产中

CAD Model

Pb

A

H

P

TO-92-3

135AN

NA

0

BLKBG

10000

No

NPN

0.5

30

1.5

10

-

125

4.76 x 4.83 x 3.62

$0.0487

More Details

KSP13TA

联系销售

量产中

CAD Model

Pb

A

H

P

TO-92-3 LF

135AR

NA

0

FNFLD

2000

No

NPN

0.5

30

1.5

10

-

125

4.83 x 4.76 x 3.62

$0.0485

More Details

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可靠性数据

Die Related Summary Data

Device: KSP13BU

Equivalent to wafer fab process: SST

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

1

13739524368

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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