Darlington Transistors | KSP13

NPN外延硅达林顿晶体管

量产中

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500 mA, 30 V NPN Darlington Bipolar Junction Transistor

  • This product is general usage and suitable for many different applications.
  • 集电极-发射极电压： VCES= 30V
  • 集电极功耗： PC（最大值）= 625mW
  • High Gain Devices
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

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与KSP13相关的产品服务、工具和其他资源

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状态

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

参考价格

KSP13BU

联系销售

量产中

CAD Model

Pb

A

H

P

TO-92-3

135AN

NA

0

BLKBG

10000

No

NPN

0.5

30

1.5

10

-

125

$0.0487

More Details

KSP13TA

联系销售

量产中

CAD Model

Pb

A

H

P

TO-92-3 LF

135AR

NA

0

FNFLD

2000

No

NPN

0.5

30

1.5

10

-

125

$0.0485

More Details

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可靠性数据

Die Related Summary Data

Device: KSP13BU

Equivalent to wafer fab process: SST

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

1

13739524368

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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