Darlington Transistors | MJ11012

30 A，60 V，NPN 达林顿双极功率晶体管

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概览

该 NPN 达林顿双极功率晶体管用作互补通用放大器应用中的输出器件。MJ11015 (PNP)、MJ11012 和 MJ11016 (NPN) 为互补器件。

  • High DC Current Gain - hFE = 1000 (Min) @ IC - 20 Adc
  • Monolithic Construction with Built-in Base Emitter Shunt Resistor
  • Junction Temperature to +200°C

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MSL Type

MSL Temp (°C)

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Container Qty.

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Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

Reference Price

MJ11012G

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Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

Y

NPN

30

60

3

1

-

4

$4.6867

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可靠性数据

Die Related Summary Data

Device: MJ11012G

Equivalent to wafer fab process: BPT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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