Darlington Transistors | MJ11032

50 A，120 V，NPN 达林顿双极功率晶体管

量产中

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概览

此类双极功率达林顿晶体管用作互补通用放大器应用中的输出器件。

  • High DC Current Gain -
    hFE = 1000 (Min) @ IC = 25 Adc
    hFE = 400 (Min) @ IC = 50 Adc
  • Curves to 100 A (Pulsed)
  • Diode Protection to Rated IC
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistor
  • Junction Temperature to +200°C
  • Pb-Free Packages are Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

Package Size (mm)

参考价格

MJ11032G

联系销售

量产中

CAD Model

Pb

A

H

P

TO-204-2 / TO-3-2

197A-05

NA

0

FTRAY

100

Yes

NPN

50

120

2.5

1

18

-

38.86 x 25.91 x 7.43

$9.5416

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可靠性数据

Die Related Summary Data

Device: MJ11032G

Equivalent to wafer fab process: BPT

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

5020632277

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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