Darlington Transistors | MJH11019

20 A，200 V PNP 达林顿双极功率晶体管

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概览

该达林顿双极功率晶体管适用于通用放大器、低频率开关和电机控制应用。MJH11017、MJH11019、MJH11021 (PNP)；MJH11018、MJH11020、MJH11022 (NPN) 为互补器件。

  • High DC Current Gain @ 10 Adc -
    hFE = 400 Min (All Types)
  • Collector-Emitter Sustaining Voltage
    VCEO(sus) = 150 Vdc (Min) MJH11018, 17
    VCEO(sus) = 200 Vdc (Min) - MJH11020, 19
    VCEO(sus) = 250 Vdc (Min) - MJH11022, 21
  • Low Collector-Emitter Saturation Voltage
    VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A
    VCE(sat) = 1.8 V (Typ) @ IC = 10 A
  • Monolithic Construction
  • Pb-Free Packages are Available

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Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

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MJH11019

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Obsolete

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CAD Model

Pb

A

H

P

SOT-93-3 / TO-218-3

340D-02

NA

0

TUBE

30

N

PNP

15

200

2.5

0.4

15

3

Price N/A

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MJH11019G

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CAD Model

Pb

A

H

P

TO-247

340L

NA

0

TUBE

30

Y

PNP

15

200

2.5

0.4

15

3

$2.3667

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可靠性数据

Die Related Summary Data

Device: MJH11019G

Equivalent to wafer fab process: BPT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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