Darlington Transistors | TIP122

5.0 A，100 V，NPN 达林顿双极功率晶体管

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概览

该达林顿双极功率晶体管适用于通用放大器和低速开关应用。TIP120、TIP121、TIP122 (NPN)；TIP125、TIP126、TIP127 (PNP) 为互补器件。

  • High DC Current Gain - hFE = 2500 (typ) @ IC = 4.0 Adc
  • Collector-Emitter Sustaining Voltage @ 100 mA
    VCEO(sus) = 60 Vdc (Min) TIP120, TIP125
    VCEO(sus) = 80 Vdc (Min) TIP121, TIP126
    VCEO(sus) = 100 Vdc (Min) TIP122, TIP127
  • Low Collector-Emitter Saturation Voltage
    VCE(sat) = 2.0 Vdc (Max) @ IC= 3.0 Adc
    = 4.0 Vdc (Max) @ IC= 5.0 Adc
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • Compact TO-220 AB Package
  • Pb-Free Packages are Available

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TIP122G

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CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

NPN

5

100

2

1

-

4

$0.262

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可靠性数据

Die Related Summary Data

Device: TIP122G

Equivalent to wafer fab process: BPT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

3017145632

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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