Digital Transistors (BRTs) | MUN5216

NPN 双极数字晶体管 (BRT)

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概览

此系列数字晶体管用于替代一个器件及其外部电阻偏置网络。该偏置电阻晶体管 (BRT) 包含一个晶体管和一个由两个电阻组成的单片偏置网络；一个串联基极电阻和一个基极发射电阻。该 BRT 无需这些独立组件，它们已集成到单个器件中。采用 BRT 既可以降低系统成本，又可以节省在板空间。

  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant

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可靠性数据

Die Related Summary Data

Device: MUN5216T1G

Equivalent to wafer fab process: SST

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

1

13739524368

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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