Digital Transistors (BRTs) | NSB9435
概览
该数字晶体管适用于替换单器件及其外部电阻偏置网络。该双极数字晶体管包含一个具有单片偏置网络的晶体管，该网络由两个电阻组成：一个串联基极电阻和一个基极-射极电阻。因为将各个组件集成到一个器件内，因此无需这些组件，可以降低系统成本和板空间。
- Collector-Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc
- High DC Current Gain -hFE = 125 (Min) @ IC = 0.8 Adc
= 90 (Min) @ IC = 3.0 Adc - Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc
= 0.55 Vdc (Max) @ IC = 3.0 Adc - SOT-223 Surface Mount Packaging
- ESD Rating - Human Body Model: Class 1B
- Machine Model: Class B - Pb-Free Package is Available
- NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
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Pb
A
H
P
SOT-223-4 / TO-261-4D
1
260
REEL
1000
N
PNP
3
30
125
-
10
-
-
-
Price N/A
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NSV9435T1G
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