High Voltage GaN FETs | NTBT050N65GN1

Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 650V, 39 mOhm

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650V high-frequency enhancement mode GaN FETs are optimized for high-frequency operation. They combine low RDS(on) with ultra-low gate and output charges (Qg, Qgd, Qoss), along with zero reverse-recovery charge, enabling higher switching frequencies, improved power density, and increased efficiency. These devices are ideal for DC-DC converters, synchronous rectification, and motor drive aplications across computing, industrial, and telecom markets.

  • 800/400V DCDC
  • PSU
  • AI
  • Cloud-Server
  • Telecom
  • High Performance Computing and Industrial
  • Optimized for High Switching Frequency (500 kHz to 2 MHz)
  • Low Gate Charge and Output Charge (Qoss, Qg)
  • No Reverse-Recovery Charge
  • Capable of Reverse Conduction

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RDS(on) Typ (mΩ)

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Qoss Typ (nC)

Qgd Typ (nC)

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ID Pulse (A)

参考价格

ENGNTBT050N65GN1TXG

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量产中

CAD Model

Pb

A

H

P

PDSO-G16 9.90x10.15x2.30, 1.20P

208AA

3

260

REEL

1200

No

650

39

50

9.4

107

4

40

77

$4.6666

More Details

NTBT050N65GN1TXG

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CAD Model

Pb

A

H

P

PDSO-G16 9.90x10.15x2.30, 1.20P

208AA

3

260

REEL

1200

No

650

39

50

9.4

107

4

40

77

$5.3332

More Details

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