High Voltage GaN FETs | NTMT130N70GN1TXG

Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 700V, 101 mOhm

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700V high-frequency enhancement mode GaN FETs are optimized for high-frequency operation. They combine low RDS(on) with ultra-low gate and output charges (Qg, Qgd, Qoss), along with zero reverse-recovery charge, enabling higher switching frequencies, improved power density, and increased efficiency. These devices are ideal for DC-DC converters, synchronous rectification, and motor drive aplications across computing, industrial, and telecom markets.

  • Consumer Adapter
  • Telecom
  • Computing
  • Industrial
  • Consumer
  • Ultra High Switching Frequency
  • No Reverse-Recovery Charge
  • Low Gate Charge, Low Output Charge
  • ESD Safeguard

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ON Target

Drain Source Voltage (V)

RDS(on) Typ (mΩ)

RDS(on) Max (mΩ)

Qg Typ (nC)

Qoss Typ (nC)

Qgd Typ (nC)

ID (A)

ID Pulse (A)

参考价格

NTMT130N70GN1TXG

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Active, New

CAD Model

Pb

A

H

P

PTFP-N9 8.00x8.00x0.90, 2.00P

522AG

3

260

REEL

2500

No

700

100

130

2.65

25.5

1.02

16

32

$0.7813

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