Low/Medium Voltage GaN FETs | NTLCC3D5N10GN1

Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 100V, 2.7 mOhm

量产中

数据表

购买

概览

100V high-frequency enhancement mode GaN FETs in a compact, dual-cooling footprint are optimized for high-frequency operation. They combine low RDS(on) with ultra-low gate and output charges (Qg, Qgd, Qoss), along with zero reverse-recovery charge, enabling higher switching frequencies, improved power density, and increased efficiency. These devices are ideal for DC-DC converters, synchronous rectification, and motor drive aplications across computing, industrial, and telecom markets.

  • DCDC
  • 40-80V BLDC Motor Drive
  • Synchronous Rectifier to 48/54V
  • Telecom
  • Computing
  • Industrial
  • Consumer
  • Optimized for High Frequency Operations (> 500 kHz up to 5 MHz)
  • No Reverse Recovery Charge
  • Ultra Low Gate Charge and Output Charge (Qg, Qgd, Qoss)
  • Capable of Reverse Conduction
  • Thermally Enhanced Dual Cooling Package

工具和资源

与NTLCC3D5N10GN1相关的产品服务、工具和其他资源

CAD Model

CAD模型

物质成分

产品更改通知

产品参数及购买信息

搜寻

Close Search

产品:

2

分享

排序方式

产品系列:

┗

可订购器件:

2

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Drain Source Voltage (V)

RDS(on) Typ (mΩ)

RDS(on) Max (mΩ)

Qg Typ (nC)

Qoss Typ (nC)

Qgd Typ (nC)

ID (A)

ID Pulse (A)

参考价格

ENGNTLCC3D5N10GN1TXG

联系销售

量产中

CAD Model

Pb

A

H

P

PTFP-N9 3.30x3.30x0.87, 0.65P

522AE

3

260

REEL

2500

No

100

2.7

3.5

7.6

42

1.5

183

380

$2.0

More Details

NTLCC3D5N10GN1TWG

联系销售

Active, New

CAD Model

Pb

A

H

P

PTFP-N9 3.30x3.30x0.87, 0.65P

522AE

3

260

REEL

2500

No

100

2.7

3.5

7.6

42

1.5

183

380

$2.1999

More Details

Show More

1-25 of 25

Products per page

Jump to :

1
contact sales icon

支持服务

联系安森美销售团队获得支持，查询或者对比产品细节。