Low/Medium Voltage GaN FETs | NTLEF2D2N15GN1

Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 150V, 1.6 mOhm

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150V high-frequency enhancement mode GaN FETs in a compact, dual-cooling footprint are optimized for high-frequency operation. They combine low RDS(on) with ultra-low gate and output charges (Qg, Qgd, Qoss), along with zero reverse-recovery charge, enabling higher switching frequencies, improved power density, and increased efficiency. These devices are ideal for DC-DC converters, synchronous rectification, and motor drive aplications across computing, industrial, and telecom markets.

  • Synchronous Rectifier to 48/54V
  • DCDC
  • Multi-level High Density ACDC for Energy Storage
  • Construction Power Tool Motor Drive (from 80V)
  • Rails & Airborne DCDC
  • Telecom
  • AI/Computing
  • Industrial
  • Energy
  • Optimized for High Frequency Applications (> 500 kHz)
  • No Reverse Recovery Charge
  • Small RDSon
  • Ultra Low Gate Charge and Output Charge (Qg, Qd, Qoss)
  • Capable of Reverse Conduction
  • Thermally Enhanced Dual Cooling Package

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ON Target

Drain Source Voltage (V)

RDS(on) Typ (mΩ)

RDS(on) Max (mΩ)

Qg Typ (nC)

Qoss Typ (nC)

Qgd Typ (nC)

ID (A)

ID Pulse (A)

参考价格

ENGNTLEF2D2N15GN1TXG

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量产中

CAD Model

Pb

A

H

P

PDSO-N8 5.00x6.00x0.87, 1.27P

3

260

REEL

2500

No

150

1.6

2.2

34

187

4.7

~NA~

840

$4.6666

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NTLEF2D2N15GN1TWG

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CAD Model

Pb

A

H

P

PDSO-N8 5.00x6.00x0.87, 1.27P

3

260

REEL

2500

No

150

1.6

2.2

34

187

4.7

~NA~

840

Price N/A

More Details

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