General Purpose and Low VCE(sat) Transistors | 2N3442

10 A, 140 V NPN Bipolar Power Transistor

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The 10 A, 140 V NPN Bipolar Power Transistor is designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches.

  • Collector -Emitter Sustaining Voltage - VCEO(sus) = 140 Vdc (Min)
  • Excellent Second Breakdown Capability
  • Pb-Free Package is Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

参考价格

2N3442G

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CAD Model

Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

No

NPN

General Purpose

5

10

140

160

7

-

5.7

20

70

0.08

117

Price N/A

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可靠性数据

Die Related Summary Data

Device: 2N3442G

Equivalent to wafer fab process: BPT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

5020632277

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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