General Purpose and Low VCE(sat) Transistors | 2N3772

20 A，60 V，NPN 双极功率晶体管

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概览

20 A，60 V NPN 双极功率晶体管适用于线性放大器、串联旁路稳压器和电感开关应用。

  • Forward Biased Second Breakdown Current Capability
    IS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771
    IS/b = 2.5 Adc @ VCE = 60 Vdc - 2N3772
  • Pb-Free Packages are Available

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

参考价格

2N3772G

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已停产

CAD Model

Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

No

NPN

General Purpose

1.4

20

60

100

7

-

2.2

15

60

0.2

150

Price N/A

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可靠性数据

Die Related Summary Data

Device: 2N3772G

Equivalent to wafer fab process: BPT

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

3331550339

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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