General Purpose and Low VCE(sat) Transistors | 2N3773

16 A，140 V，NPN 双极功率晶体管

量产中

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概览

2N3773 功率晶体管适用于大功率音频、磁盘头定位器和其他线性应用。此器件还可用于继电器或电磁驱动器、DC-DC 转换器或逆变器等电源开关电路。

  • High Safe Operating Area (100% Tested) 150 W @ 100 V
  • Completely Characterized for Linear Operation
  • High DC Current Gain and Low Saturation Voltage
    hFE = 15 (Min) @ 8 A, 4 V
    VCE(sat) = 1.4 V (Max) @ IC = 8 A, IB = 0.8 A
  • For Low Distortion Complementary Designs

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

参考价格

2N3773G

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量产中

CAD Model

Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

No

NPN

General Purpose

4

16

140

160

7

-

2.2

15

60

4

150

39.37 x 26.67 x 7.43

$3.9516

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可靠性数据

Die Related Summary Data

Device: 2N3773G

Equivalent to wafer fab process: BPT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

5020632277

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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