General Purpose and Low VCE(sat) Transistors | 2N4918

1.0 A，40 V PNP 双极功率晶体管

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概览

该 3 A 80 V 双极功率晶体管适用于驱动器电路、开关和放大器应用。

  • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp
  • Excellent Power Dissipation - PD = 30 W @ TC = 25°C
  • Excellent Safe Operating Area
  • Gain Specified to IC = 1.0 Amp
  • Complement to NPN 2N4921, 2N4922, 2N4923
  • Pb-Free Package is Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

参考价格

2N4918

联系销售

已停产

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

No

-

General Purpose

0.6

1

-

-

-

-

-

30

150

3

30

Price N/A

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2N4918G

联系销售

Last Shipments

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

No

PNP

General Purpose

0.6

1

40

40

5

1.3

1.3

30

150

3

30

Price N/A

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可靠性数据

Die Related Summary Data

Device: 2N4918G

Equivalent to wafer fab process: BPT

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

5020632277

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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