General Purpose and Low VCE(sat) Transistors | 2N5655

高压 NPN 双极功率晶体管

Obsolete

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概览

此类器件适用于音频输出放大器、低电流高电压转换器以及交流线路继电器等线路运行设备。

  • Excellent DC Current Gain
    hFE = 30-250 @ IC = 100 mAdc
  • Current-Gain - Bandwith Product -
    fT=10MHz (Min) @ IC = 50 mAdc
  • Pb-Free Packages are Available

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

2N5655

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Obsolete

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CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

General Purpose

1

0.5

250

-

-

-

-

30

250

10

20

Price N/A

More Details

2N5655G

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Obsolete

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CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

General Purpose

1

0.5

250

275

6

-

-

30

250

10

20

Price N/A

More Details

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