General Purpose and Low VCE(sat) Transistors | 2N5657

0.5 A，350 V，NPN 双极功率晶体管

Obsolete

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概览

此类器件适用于音频输出放大器、低电流高电压转换器以及交流线路继电器等线路供电设备。

  • Excellent DC Current Gain
    hFE = 30-250 @ IC = 100 mAdc
  • Current-Gain - Bandwith Product -
    fT=10MHz (Min) @ IC = 50 mAdc
  • Pb-Free Packages are Available

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

2N5657

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CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

General Purpose

1

0.5

350

-

-

-

-

30

250

10

20

Price N/A

More Details

2N5657G

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Obsolete

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CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

N

NPN

General Purpose

1

0.5

350

375

6

-

-

30

250

10

20

Price N/A

More Details

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可靠性数据

Die Related Summary Data

Device: 2N5657G

Equivalent to wafer fab process: BPT

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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