General Purpose and Low VCE(sat) Transistors | 2N5686

50 A，80 V，NPN 双极功率晶体管

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该 50A，80 V， NPN 双极功率晶体管适用于大功率放大器和开关电路应用。

  • High Current Capability - IC Continuous = 50 Amperes.
  • DC Current Gain - hFE = 15-60 @ IC = 25 Adc
  • Low Collector?Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc
  • Pb-Free Packages are Available

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

2N5686G

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CAD Model

Pb

A

H

P

TO-204-2 / TO-3-2

197A-05

NA

0

FTRAY

100

N

NPN

General Purpose

1

50

80

80

5

2

2

15

60

2

300

$11.6474

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可靠性数据

Die Related Summary Data

Device: 2N5686G

Equivalent to wafer fab process: BPT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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