General Purpose and Low VCE(sat) Transistors | 2N5686

50 A，80 V，NPN 双极功率晶体管

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该 50A，80 V， NPN 双极功率晶体管适用于大功率放大器和开关电路应用。

  • High Current Capability - IC Continuous = 50 Amperes.
  • DC Current Gain - hFE = 15-60 @ IC = 25 Adc
  • Low Collector?Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc
  • Pb-Free Packages are Available

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MSL Temp (°C)

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Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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fT Min (MHz)

PTM Max (W)

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2N5686G

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CAD Model

Pb

A

H

P

TO-204-2 / TO-3-2

197A-05

NA

0

FTRAY

100

N

NPN

General Purpose

1

50

80

80

5

2

2

15

60

2

300

$11.6474

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可靠性数据

Die Related Summary Data

Device: 2N5686G

Equivalent to wafer fab process: BPT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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