General Purpose and Low VCE(sat) Transistors | 2N6031

高电压大功率晶体管

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. . . 适用于大功率音频放大器应用和高电压开关稳压器电路。

  • High Collector Emitter Sustaining Voltage
    VCEO(sus) = 140 Vdc
  • High DC Current Gain - @ IC = 8.0 Adc
    hFE = 15 (Min)
  • Low Collector-Emitter Saturation Voltage
    VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
  • These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

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Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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fT Min (MHz)

PTM Max (W)

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参考价格

2N6031G

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Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

No

-

General Purpose

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-

-

-

-

-

-

15

60

1

200

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