General Purpose and Low VCE(sat) Transistors | 2N6031

高电压大功率晶体管

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. . . 适用于大功率音频放大器应用和高电压开关稳压器电路。

  • High Collector Emitter Sustaining Voltage
    VCEO(sus) = 140 Vdc
  • High DC Current Gain - @ IC = 8.0 Adc
    hFE = 15 (Min)
  • Low Collector-Emitter Saturation Voltage
    VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
  • These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

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VCE(sat) Max (V)

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VCEO Min (V)

VCBO (V)

VEBO (V)

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2N6031G

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Pb

A

H

P

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1-07

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0

FTRAY

100

N

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-

-

-

-

-

-

15

60

1

200

Price N/A

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