General Purpose and Low VCE(sat) Transistors | 2SC5658RM3

小信号通用 NPN 晶体管

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概览

此 NPN 晶体管适用于通用放大器应用。此器件采用 SOT-723 封装，适用于电路板空间非常宝贵的低功率表面贴装应用。

  • Reduces Board Space

  • High hFE, 210460 (typical)
  • Low VCE(sat), < 0.5 V
  • Available in 8 mm, 7-inch/3000 Unit Tape and Reel
  • This is a PbFree Device

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

2SC5658RM3T5G

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CAD Model

Pb

A

H

P

SOT-723-3

631AA

1

260

REEL

8000

N

NPN

General Purpose

0.4

0.1

50

50

7

-

-

215

375

180

0.26

$0.0368

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可靠性数据

Die Related Summary Data

Device: 2SC5658RM3T5G

Equivalent to wafer fab process: SST

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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