General Purpose and Low VCE(sat) Transistors | KSB546

PNP外延硅晶体管

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概览

  • This product is general usage and suitable for many different applications.

  • 集电极-基极电压：VCBO= -200 V
  • 集电极电流：IC= -2 A
  • 集电极损耗：PC= 2 5W (TC=25°C)
  • KSD401TV 的补充器件TV 垂直偏转输出
  • TV Vertical Deflection Output

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状态

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

KSB546YTU

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CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

PNP

General Purpose

1

2

150

200

5

-

-

120

240

5

2

Price N/A

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可靠性数据

Die Related Summary Data

Device: KSB546YTU

Equivalent to wafer fab process: TM

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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