General Purpose and Low VCE(sat) Transistors | KSE210(LEGACY FAIRCHILD)

PNP Epitaxial Silicon Transistor

Obsolete

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概览

  • This product is general usage and suitable for many different applications.

  • Low Collector-Emitter Saturation Voltage
  • High Current Gain Bandwidth Product: fT= 65 MHz@IC= -100 mA (Min.)
  • Complement to KSE200

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

KSE210STU

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Obsolete

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CAD Model

Pb

A

H

P

TO-126-3

340AS

NA

0

TUBE

1920

N

PNP

General Purpose

1.8

5

25

40

8

2.5

1.6

45

180

65

15

Price N/A

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可靠性数据

Die Related Summary Data

Device: KSE210STU

Equivalent to wafer fab process: TM

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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