General Purpose and Low VCE(sat) Transistors | NSS20600CF8

20 V，6.0 A，低饱和压，PNP 晶体管，ChipFET™

Obsolete

数据表

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概览

低饱和压双极结晶体管 (BJT) 是具有超低饱和压和高电流增益能力的微型表面贴装器件。这些器件设计用于需要经济、高效的能量控制的低电压、高速开关应用。

  • Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays

  • High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

NSS20600CF8T1G

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Obsolete

相似产品推荐
CAD Model

Pb

A

H

P

ChipFET-8

1206A-03

1

260

REEL

3000

N

PNP

Low VCE(sat)

0.06

-

20

-

-

-

-

250

-

100

2.75

Price N/A

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