General Purpose and Low VCE(sat) Transistors | NSVT1418L

双极晶体管，160V，-1A，低饱和压 PNP，单

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概览

此器件是一款双极结晶体管，具有高电流、低饱和电压和高速开关特性。适用于汽车应用。经过了 AEC-Q101 认证且具有 PPAP 功能。

  • Load Switch
  • Lighting
  • Infotainment

  • Automotive Electronic Control Units
  • Automotive Telematics

  • Large Current Capacitance
  • Low Collector to Emitter Saturation Voltage
  • High Speed Switching
  • High Allowable Power Dissipation
  • AEC-Q101 Qualified and PPAP Capable

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Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

NSVT1418LT1G

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CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

318

1

260

REEL

3000

Y

PNP

Low VCE(sat)

0.13

1

160

180

6

1.2

~NA~

100

400

~NA~

0.42

$0.1725

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可靠性数据

Die Related Summary Data

Device: NSVT1418LT1G

Equivalent to wafer fab process: SSD

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SSD

0

6889897810

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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