General Purpose and Low VCE(sat) Transistors | BC847BM3

Low and Medium Voltage NPN Bipolar Transistor

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概览

The Low and Medium Voltage NPN Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT723 package, which is designed for low power surface mount applications.

  • This is a PbFree Device

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

BC847BM3T5G

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CAD Model

Pb

A

H

P

SOT-723-3

631AA

1

260

REEL

8000

N

NPN

General Purpose

0.25

0.1

45

50

6

0.7

0.66

200

450

100

0.26

$0.0363

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可靠性数据

Die Related Summary Data

Device: BC847BM3T5G

Equivalent to wafer fab process: SST

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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