General Purpose and Low VCE(sat) Transistors | BD13510

1.5 A, 45V NPN Power Bipolar Junction Transistor

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This series of plastic, NPN Power Bipolar Junction Transistor transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

  • Power supplies

  • Power supplies

  • Minimum Gain - hFE = 63 @ IC = 150 mA
  • BD135, BD137, BD139 are complementary with BD136, BD138, BD140
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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MSL Temp (°C)

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Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

BD13510STU

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Lifetime

CAD Model

Pb

A

H

P

TO-126-3

340AS

NA

0

TUBE

1920

N

NPN

General Purpose

0.5

1.5

45

45

5

-

1

63

160

-

12.5

$0.2661

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可靠性数据

Die Related Summary Data

Device: BD13510STU

Equivalent to wafer fab process: TM

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平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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