General Purpose and Low VCE(sat) Transistors | BD810

高功率 PNP 双极晶体管

已停产

数据表

购买

概览

此高功率 NPN 双极功率晶体管使用互补或准互补电路互补或准互补电路，适用于高功率音频放大器。

  • DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc
  • Pb-Free Packages are Available

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CAD Model

CAD模型

物质成分

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可靠性数据

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产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

参考价格

BD810

联系销售

已停产

CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

No

PNP

General Purpose

1.1

10

80

-

-

-

-

30

-

1.5

90

Price N/A

More Details

BD810G

联系销售

已停产

CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

No

PNP

General Purpose

1.1

10

80

80

5

-

1.6

30

-

1.5

90

Price N/A

More Details

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支持服务

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可靠性数据

Die Related Summary Data

Device: BD810G

Equivalent to wafer fab process: BPT

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

5020632277

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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