General Purpose and Low VCE(sat) Transistors | BUH150

15 A, 400 V NPN Bipolar Power Transistor

已停产

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概览

This NPN Bipolar Power Transistor is specifically designed to sustain the large inrush current during either the start-up conditions or under a short circuit across the load.

  • Improved Efficiency Due to the Low Base Drive Requirements: High and Flat DC Current Gain hFE Fast Switching
  • Robustness Thanks to the Technology Developed to Manufacture this Device
  • Motorola "6 SIGMA" Philosophy Provides Tight and Reproducible Parametric Distributions
  • Pb-Free Package is Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

参考价格

BUH150

联系销售

已停产

CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

No

-

General Purpose

-

-

-

-

-

-

-

8

-

23

150

Price N/A

More Details

BUH150G

联系销售

已停产

CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

No

NPN

General Purpose

-

-

400

-

-

-

-

8

-

23

150

Price N/A

More Details

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