General Purpose and Low VCE(sat) Transistors | BUH51

NPN 硅塑料晶体管

已停产

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概览

BUH51 具有应用特定的先进裸片，适用于 50 W 卤素电子变压器。此功率晶体管专用于在启动情况或负载短路情况下保持较大的涌入电流。此高电压/高速产品具有以下主要特性：

  • Improved Efficiency Due to the Low Base Drive Requirements: High and Flat DC Current Gain hFE Fast Switching
  • Robustness Thanks to the Technology Developed to Manufacture this Device
  • Motorola "6 SIGMA" Philosophy Providing Tight and Reproducible Parametric Distributions
  • This device is available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

参考价格

BUH51

联系销售

已停产

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

No

-

General Purpose

-

-

-

-

-

-

-

8

-

23

50

Price N/A

More Details

BUH51G

联系销售

已停产

CAD Model

Pb

A

H

P

TO-225-3

77-09

NA

0

BLKBX

500

No

NPN

General Purpose

-

-

500

-

-

-

-

8

-

23

50

Price N/A

More Details

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