General Purpose and Low VCE(sat) Transistors | BUL642D2

Power 3A 825V NPN

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数据表

购买

概览

  • Low Base Drive Requirement.
  • High Peak DC CurrentGain (55 Typical) @ Ic = 300mA/5V.
  • Extremely Low Storage Time Min/Max Gauratees Due to the H2BIP Structure which Minimizes the Spread.
  • Integrated Collector-Emitter Free Wheeling Diode.
  • Fully Characterized Dynamic VCEsat.
  • Avalanche Energy 20mJ Typical Capability.
  • Pb-Free Package is Available

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

参考价格

BUL642D2G

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已停产

CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

No

NPN

General Purpose

-

-

440

-

-

-

-

16

-

-

75

Price N/A

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