General Purpose and Low VCE(sat) Transistors | BUT11AF

10 A，450 V NPN 功率双极晶体管

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10 A，450 V NPN 功率双极晶体管

  • Low Base Drive Requirements
  • Isolated Overmold Package
  • Improved System Efficiency
  • No Isolating Washers Required
  • Reduced System Cost

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

BUT11AFTU

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CAD Model

Pb

A

H

P

TO-220-3 FullPak

221AT

NA

0

TUBE

1000

N

NPN

General Purpose

1.5

5

450

1000

9

1.3

-

-

-

-

40

$0.8698

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可靠性数据

Die Related Summary Data

Device: BUT11AFTU

Equivalent to wafer fab process: TM

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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