General Purpose and Low VCE(sat) Transistors | BUV22

40 A，250 V NPN 双极功率晶体管

量产中

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概览

40 A，250V NPN 双极功率晶体管适用于高速、高电流和大功率应用。

  • High DC current gain: HFE min. = 20 at IC = 10 A
  • Low VCE(sat): VCE(sat) max. = 1.0 V at IC = 10 A
  • Very fast switching times:
    TF max. = 0.35 ms at IC = 20 A
  • Pb-Free Package is Available

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MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

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Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

参考价格

BUV22G

联系销售

量产中

CAD Model

Pb

A

H

P

TO-204-2 / TO-3-2

197A-05

NA

0

FTRAY

100

No

NPN

General Purpose

1

40

250

300

7

1.5

-

20

60

8

250

38.86 x 25.91 x 7.43

$15.8417

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可靠性数据

Die Related Summary Data

Device: BUV22G

Equivalent to wafer fab process: BPT

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BPT

8

5020632277

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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