General Purpose and Low VCE(sat) Transistors | EMX2DXV6

Dual NPN Bipolar Transistor

量产中

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概览

This Dual NPN Bipolar Transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board space is at a premium.

  • Reduces Board Space
  • TBD
  • High hFE, 210-460 (Typical)
  • Low VCE(sat), < 0.5V
  • Pb-free Solder Plating
  • These are Pb-Free Devices

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

参考价格

EMX2DXV6T1G

联系销售

量产中

CAD Model

Pb

A

H

P

SOT-563

463A-01

1

260

REEL

4000

No

Dual NPN

General Purpose

0.4

0.1

50

60

7

0

0

120

560

0

0.357

Price N/A

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EMX2DXV6T5G

联系销售

Last Shipments

CAD Model

Pb

A

H

P

SOT-563

463A-01

1

260

REEL

8000

No

Dual NPN

General Purpose

0.4

0.1

50

60

7

-

-

120

560

-

0.357

Price N/A

More Details

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可靠性数据

Die Related Summary Data

Device: EMX2DXV6T5G

Equivalent to wafer fab process: SST

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

1

13739524368

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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