General Purpose and Low VCE(sat) Transistors | FJB102

100V高电压功率达林顿晶体管

Active

相似产品推荐

数据表

购买

概览

  • This product is general usage and suitable for many different applications.

  • 高DC电流增益：hFE=1000 @ VCE= 4 V，IC= 3 A（最小值）
  • 低集电极-发射极饱和电压
  • 高集电极-发射极维持电压
  • 带内置基极-发射极并联电阻的单片式结构
  • 工业用途

Tools and Resources

Product services, tools and other useful resources related to FJB102

CAD Model

CAD模型

物质成分

产品更改通知

可靠性数据

Buy/Parametrics Table

搜寻

Close Search

产品:

1

分享

排序方式

产品系列:

┗

可订购器件:

1

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

FJB102TM

Contact Sales

Active

CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

N

NPN

High-Voltage Power Transistor

2.5

8

100

100

5

-

2.8

200

20000

-

80

$0.4643

More Details

Show More

1-25 of 25

Products per page

Jump to :

1
contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.

可靠性数据

Die Related Summary Data

Device: FJB102TM

Equivalent to wafer fab process: TM

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TM

21

1953855815

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

重新搜寻