General Purpose and Low VCE(sat) Transistors | FJD3305H1

NPN 硅晶体管

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概览

  • This product is general usage and suitable for many different applications.
  • 高压开关模式应用
  • 快速开关
  • 广泛的安全工作区
  • 适合电子镇流器应用
  • 波动焊接

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Package Size (mm)

参考价格

FJD3305H1TM

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Last Shipments

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

No

NPN

Silicon Transistor

1

4

400

700

9

1.6

1.2

8

40

4

50

Price N/A

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可靠性数据

Die Related Summary Data

Device: FJD3305H1TM

Equivalent to wafer fab process: SST

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

1

13739524368

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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