General Purpose and Low VCE(sat) Transistors | FJD5555

高电压快速开关晶体管

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概览

FJD5555 是一款 1050 V 5 A NPN 硅外延平面晶体管。FJD5555 适用于高速开关应用，采用行业标准的表面贴装 TO-252 (DPAK) 封装，提供设计灵活性和卓越的功耗性能。

  • This product is general usage and suitable for many different applications.

  • 高电压能力
  • 高开关速度
  • 宽安全工作范围

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

FJD5555TM

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CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

NPN

Silicon Transistor

1.5

5

400

1050

14

1.2

-

20

40

-

100

$0.3028

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可靠性数据

Die Related Summary Data

Device: FJD5555TM

Equivalent to wafer fab process: TM

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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