General Purpose and Low VCE(sat) Transistors | FJI5603D

NPN芯片晶体管

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概览

  • This product is general usage and suitable for many different applications.

  • 广泛的安全工作区
  • 存储时间方面的差异小
  • 内置续流二极管
  • 高压和高速功率开关的应用
  • 电子镇流器应用

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

FJI5603DTU

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CAD Model

Pb

A

H

P

I2PAK-3 / D2PAK-3 STRAIGHT LEAD

418AV

NA

0

TUBE

1000

Y

NPN

Silicon Transistor

2.5

3

800

1600

12

1.2

-

20

35

5

100

$0.7978

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可靠性数据

Die Related Summary Data

Device: FJI5603DTU

Equivalent to wafer fab process: SST

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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