General Purpose and Low VCE(sat) Transistors | FJP3307D

高电压快速开关 NPN 功率晶体管

已停产

数据表

购买

概览

FJP3307D 是一款 700 V 8 A NPN 硅外延平面晶体管。FJP3307D 适用于高速开关应用，采用行业标准的 TO-220 封装，提供设计灵活性和卓越的功耗性能。

  • This product is general usage and suitable for many different applications.
  • 高电压能力
  • 高开关速度
  • 宽安全工作范围
  • 集电极和发射极之间内置二极管

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

参考价格

FJP3307DTU

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已停产

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

No

NPN

High Voltage Fast Switching Power Transistor

3

8

400

700

9

1.6

-

8

40

-

80

Price N/A

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可靠性数据

Die Related Summary Data

Device: FJP3307DTU

Equivalent to wafer fab process: TM

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TM

22

2464763921

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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