General Purpose and Low VCE(sat) Transistors | FJPF13009

NPN芯片晶体管

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概览

FJPF13009是一款700 V 12 A NPN硅外延平面晶体管。 FJPF13009提供多种类型的hFE二进制，方便设计时使用。 FJPF13009设计用于高速开关应用，采用业界标准TO-220F封装，提供设计灵活性以及出色的功耗性能。

  • This product is general usage and suitable for many different applications.

  • 高电压能力
  • 高开关速度

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

FJPF13009H1TU

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CAD Model

Pb

A

H

P

TO-220-3 FullPak

221AT

NA

0

TUBE

1000

N

NPN

Silicon Transistor

3

12

400

700

9

1.6

-

8

17

4

50

Price N/A

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FJPF13009H2TU

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Last Shipments

相似产品推荐
CAD Model

Pb

A

H

P

TO-220-3 FullPak

221AT

NA

0

TUBE

1000

N

NPN

Silicon Transistor

3

12

400

700

9

1.6

-

15

28

4

50

Price N/A

More Details

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可靠性数据

Die Related Summary Data

Device: FJPF13009H1TU

Equivalent to wafer fab process: BM

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

BM

0

199667497

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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