General Purpose and Low VCE(sat) Transistors | FMB5551

NPN通用放大器

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概览

  • This product is general usage and suitable for many different applications.

  • 该器件设计用于通用高压放大器和气体放电显示驱动。
  • 采用工艺16设计。
  • 如需相关特性，请参见MMBT5551。NPN通用放大器SuperSOT-6表面贴装封装

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

FMB5551

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CAD Model

Pb

A

H

P

TSOT-23-6

419BL

1

260

REEL

3000

N

NPN

General Purpose

0.2

0.6

160

180

6

1

-

80

250

100

0.7

$0.0984

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可靠性数据

Die Related Summary Data

Device: FMB5551

Equivalent to wafer fab process: SST

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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