General Purpose and Low VCE(sat) Transistors | FSB649

NPN 低饱和晶体管

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概览

此类器件具有高电流增益和低饱和压，连续集极电流最高为 3 A。源自 Process NC。

  • This product is general usage and suitable for many different applications.

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状态

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

FSB649

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Lifetime

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CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

NPN

Low VCE(sat)

0.6

3

25

35

5

1.25

1

100

300

150

0.5

$0.1213

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可靠性数据

Die Related Summary Data

Device: FSB649

Equivalent to wafer fab process: SST

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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