General Purpose and Low VCE(sat) Transistors | KSC5502DT

NPN 三扩散平面硅晶体管

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概览

  • This product is general usage and suitable for many different applications.

  • 广泛的安全工作区
  • 内置续流二极管
  • 适合电子镇流器应用
  • 存储时间方面的差异小
  • 两个封装选项：D-PAK 或 TO-220
  • 高压电源开关

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

KSC5502DTTU

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CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

NPN

General Purpose

1.5

2

600

1200

12

1.2

-

12

30

11

118.16

Price N/A

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可靠性数据

Die Related Summary Data

Device: KSC5502DTTU

Equivalent to wafer fab process: TM

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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