General Purpose and Low VCE(sat) Transistors | KSC815

NPN外延硅晶体管

Obsolete

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概览

  • This product is general usage and suitable for many different applications.

  • 集电极-基极电压： VCBO = 60V
  • KSA539的补充器件
  • 后缀“-C”表示中心集电极（1. 发射极 2. 集电极 3. 基极）低频放大器和高频振荡器

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

KSC815YTA

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Obsolete

CAD Model

Pb

A

H

P

TO-92-3 LF

135AR

NA

0

FNFLD

2000

N

NPN

General Purpose

0.4

0.2

45

60

5

1.1

0.9

120

240

100

0.4

Price N/A

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可靠性数据

Die Related Summary Data

Device: KSC815YTA

Equivalent to wafer fab process: SST

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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