General Purpose and Low VCE(sat) Transistors | KSD261

NPN外延硅晶体管

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CAD Model

CAD模型

概览

  • This product is general usage and suitable for many different applications.
  • KSA643的补充器件
  • 集电极损耗： PC = 500mW
  • 后缀“-C”表示中心集电极（1. 发射极 2. 集电极 3. 基极）低频功率放大器

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

KSD261CGTA

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Obsolete

CAD Model

Pb

A

H

P

TO-92-3 LF

135AR

NA

0

FNFLD

2000

N

NPN

General Purpose

0.4

0.5

20

40

5

-

-

200

400

-

0.5

Price N/A

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