General Purpose and Low VCE(sat) Transistors | KSD261

NPN外延硅晶体管

Obsolete

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概览

  • This product is general usage and suitable for many different applications.

  • KSA643的补充器件
  • 集电极损耗： PC = 500mW
  • 后缀“-C”表示中心集电极（1. 发射极 2. 集电极 3. 基极）低频功率放大器

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

KSD261CGTA

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Obsolete

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CAD Model

Pb

A

H

P

TO-92-3 LF

135AR

NA

0

FNFLD

2000

N

NPN

General Purpose

0.4

0.5

20

40

5

-

-

200

400

-

0.5

Price N/A

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可靠性数据

Die Related Summary Data

Device: KSD261CGTA

Equivalent to wafer fab process: SST

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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