General Purpose and Low VCE(sat) Transistors | KSE800

NPN外延硅达林顿晶体管

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概览

  • This product is general usage and suitable for many different applications.

  • 高DC电流增益：hFE=750（最小值）@ IC=1.5和2.0A DC
  • KSE700/701/702/703 的补充器件
  • 具有内置基极-发射极电阻的单片架构

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

KSE800STU

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CAD Model

Pb

A

H

P

TO-126-3

340AS

NA

0

TUBE

1920

Y

NPN

General Purpose

3

4

60

60

5

-

3

750

-

-

40

$0.4027

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可靠性数据

Die Related Summary Data

Device: KSE800STU

Equivalent to wafer fab process: TM

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TM

21

1953855815

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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